Electron Mobility Model for 〈110〉 Stressed Si Including Strain-Dependent Mass
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چکیده
Stress induced enhancement of electron mobility has primarily been attributed to the splitting of the conduction bands. However, experiments [1] have indicated that the mobility enhancement cannot solely be attributed to this effect, and a recent study has shown that a stress along the 〈110〉 direction leads to a change of the effective mass [2]. This work investigates the effect of the variation of the effective mass with stress along 〈110〉 direction on the electron mobility. An improved low-field mobility model incorporating the effective mass change is presented.
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تاریخ انتشار 2006